Dry etching method

Provided is a low-cost dry etching method which is capable of efficiently producing a silicon substrate having a texture structure that effectively exhibits light diffusion containment effect and enables formation of a film with good coverage in cases where a predetermined thin film is formed in a subsequent step. This dry etching method comprises: a first step wherein a first etching gas, which contains a fluorine-containing gas and a halogen-containing gas, is introduced into a film formation chamber (12) at reduced pressure, in said film formation chamber a silicon substrate (W) being disposed, and the surface of the silicon substrate is etched by supplying electric power for discharge; and a second step wherein a second etching gas that contains a fluorine-containing gas is introduced into the film formation chamber at reduced pressure, in said film formation chamber the silicon substrate that has been etched in the first step being disposed, and the surface of the silicon substrate is further etched by s