Cleaning method for removing TiN and Ti films attached to surface of metal part

The invention discloses a cleaning method for removing TiN and Ti films attached to the surface of a metal part. The method comprises the following steps: S1, soaking the part in an alkaline solution; S2, cleaning the part with an acid solution; S3, cleaning the part with cleanout liquid; and S4, dr...

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Bibliographische Detailangaben
Hauptverfasser:	GUO TIANZENG, HE XIANHAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY CLEANING OR DEGREASING OF METALLIC MATERIAL BY CHEMICALMETHODS OTHER THAN ELECTROLYSIS COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY
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Beschreibung
Zusammenfassung:	The invention discloses a cleaning method for removing TiN and Ti films attached to the surface of a metal part. The method comprises the following steps: S1, soaking the part in an alkaline solution; S2, cleaning the part with an acid solution; S3, cleaning the part with cleanout liquid; and S4, drying the part. The cleaning method for removing the TiN and Ti films attached to the surface of the metal part has the advantages of simple operation, low time consumption and ideal cleaning effect, the metal part in a physical vapor deposition process chamber is not damaged; after the metal part which is subjected to a semiconductor process for a period of time in the physical vapor deposition process chamber is cleaned by using the method, TiN and Ti pollutants on the surface of the metal part are completely removed, and the surface of the part is not damaged, thus reaching the cleaning effect.