Photovoltaic device and manufacturing method thereof

The invention relates to a photovoltaic device, which comprises a supporting layer, a cadmium, tellurium, and copper-containing n-type first layer, a cadmium, tellurium, and copper-containing p-type second layer, and a transparent conductive oxide layer. The invention also relates to a method of manufacturing the photovoltaic device. the method comprises steps: a component provided with a cadmium and tellurium-containing layer and a copper-containing layer on the cadmium and tellurium-containing layer is provided; and thermal annealing is carried out on the element to respectively form the cadmium, tellurium, and copper-containing n-type first layer and the cadmium, tellurium, and copper-containing p-type second layer.