Carbon Layers for High Temperature Processes

Carbon layers with reduced hydrogen content may be deposited by plasma-enhanced chemical vapor deposition by selecting processing parameters accordingly. The carbon layers may be subjected to high temperature processing without showing excessive shrinking.

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Bibliographische Detailangaben
Hauptverfasser:	JOACHIM HIRSCHLER, DANIEL MAURER, HELMUT SCHOENHERR, MATTHIAS KUENLE, GUENTER DENIFL, MARKUS KAHN, URSULA HEDENIG, THOMAS GRILLE, ROLAND MOENNICH
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Carbon layers with reduced hydrogen content may be deposited by plasma-enhanced chemical vapor deposition by selecting processing parameters accordingly. The carbon layers may be subjected to high temperature processing without showing excessive shrinking.