Manufacturing method for oriented thermosensitive thin-film resistor

The invention relates to a manufacturing method for an oriented thermosensitive thin-film resistor. According to the manufacturing method, lanthanum nitrate, manganese acetate and aluminum nitrate serve as raw materials and are respectively dissolved in glacial acetic acid and ethylene glycol monomethyl ether to obtain a clear solution, the solution is deposited on a (100) oriented lanthanum nickelate substrate through a spin-coating method, volatilized organic matter is pretreated, the needed film thickness is achieved through repeated spin coating, an oriented thermosensitive thin film is obtained through final heat treatment, and the thermosensitive resistor is obtained through manufacturing electrodes. Because the oriented thin film has higher crystal particle ordered arrangement compared with a common thin film, not only can requirements for microminiaturization, integration and utilization in a high-temperature environment of an electronic equipment structure be met, but also the requirement for rapider