On-chip array thermoelectric converter of field effect transistor and fully-automatic alignment manufacturing technology thereof

The invention belongs to the technical field with the bulk silicon micromechanical manufacturing technology and the silicon gate automatic alignment CMOS integrated circuit technology combined and particularly relates to an on-chip array thermoelectric converter of a field effect transistor and a fu...

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Bibliographische Detailangaben
Hauptverfasser: XIE XIAOCHUN, YUAN XINDI, HAN JIANQIANG, YUAN SHOUCAI, LIAO YUBO
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention belongs to the technical field with the bulk silicon micromechanical manufacturing technology and the silicon gate automatic alignment CMOS integrated circuit technology combined and particularly relates to an on-chip array thermoelectric converter of a field effect transistor and a fully-automatic alignment manufacturing technology of the on-chip array thermoelectric converter. To solve the technical problems, the on-chip array thermoelectric converter of the field effect transistor is provided and comprises a P-type silicon substrate, silicon islands, heavy boron doped silicon layers, deep grooves, heavy boron doped silicon layers in the deep grooves, polycrystalline silicon and field region oxide layers. The two silicon islands are machined on the P-type silicon substrate, the heavy boron doped silicon layers are injected into the bottoms of the regions, corresponding to the silicon islands, of the P-type silicon substrate, the square deep grooves are formed in the peripheral edges of the P-t