Carbon Nanostructure Device Fabrication Utilizing Protect Layers
Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing.
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| creator | CHRISTOS D.DIMITRAKOPOULOS ALFRED GRILL KATHERINE L.SAENGER DIRK PFEIFER ROBERT L.WISNIEFF JACK O.CHU TIMOTHY J.MCARDLE |
| description | Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing. |
| format | Patent |
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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING |
| title | Carbon Nanostructure Device Fabrication Utilizing Protect Layers |
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