Solid state thin film capacitor and preparation method thereof

Solid state thin film capacitor and preparation method thereof

The invention relates to a solid state thin film capacitor and a preparation method thereof. The capacitor comprises a lower electrode (1), an activated aluminium oxide thin film (2), an upper electrode (3), an anode oxide film (4) and a substrate carillon chip (5). The surface of the substrate cari...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YAO XI, HU BAOFU, CHEN JIANWEN, YANG PENGFEI, XIAO RUIHUA, YAO MANWEN
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CAPACITORS
CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
ELECTRICITY
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator YAO XI
HU BAOFU
CHEN JIANWEN
YANG PENGFEI
XIAO RUIHUA
YAO MANWEN
description The invention relates to a solid state thin film capacitor and a preparation method thereof. The capacitor comprises a lower electrode (1), an activated aluminium oxide thin film (2), an upper electrode (3), an anode oxide film (4) and a substrate carillon chip (5). The surface of the substrate carillon chip (5) is coated with the lower electrode (1), the activated aluminium oxide thin film (2) is arranged between the upper electrode (3) and the lower electrode (1), and a layer of anode oxide film (4) which is formed through an electrochemical method and has a self-repairing function is arranged on the interface of the activated aluminium oxide thin film (2), the upper electrode (3) and the lower electrode (1). Compared with the prior art, the structure and the preparation process of the solid state thin film capacitor are simple, the solid state thin film capacitor is suitable for large-scale batch production, the consumed raw material cost is low, a solid state thin film is used as a dielectric medium, an e
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN103971933A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN103971933A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN103971933A3</originalsourceid><addsrcrecordid>eNrjZLALzs_JTFEoLkksSVUoycjMU0jLzMlVSE4sSEzOLMkvUkjMS1EoKEotSCxKLMnMz1PITS3JyE8BKk0tSs1P42FgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcVAQ1LzUkvinf0MDYwtzQ0tjY0djYlRAwBXXzCg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Solid state thin film capacitor and preparation method thereof</title><source>esp@cenet</source><creator>YAO XI ; HU BAOFU ; CHEN JIANWEN ; YANG PENGFEI ; XIAO RUIHUA ; YAO MANWEN</creator><creatorcontrib>YAO XI ; HU BAOFU ; CHEN JIANWEN ; YANG PENGFEI ; XIAO RUIHUA ; YAO MANWEN</creatorcontrib><description>The invention relates to a solid state thin film capacitor and a preparation method thereof. The capacitor comprises a lower electrode (1), an activated aluminium oxide thin film (2), an upper electrode (3), an anode oxide film (4) and a substrate carillon chip (5). The surface of the substrate carillon chip (5) is coated with the lower electrode (1), the activated aluminium oxide thin film (2) is arranged between the upper electrode (3) and the lower electrode (1), and a layer of anode oxide film (4) which is formed through an electrochemical method and has a self-repairing function is arranged on the interface of the activated aluminium oxide thin film (2), the upper electrode (3) and the lower electrode (1). Compared with the prior art, the structure and the preparation process of the solid state thin film capacitor are simple, the solid state thin film capacitor is suitable for large-scale batch production, the consumed raw material cost is low, a solid state thin film is used as a dielectric medium, an e</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CAPACITORS ; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ; ELECTRICITY</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140806&amp;DB=EPODOC&amp;CC=CN&amp;NR=103971933A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140806&amp;DB=EPODOC&amp;CC=CN&amp;NR=103971933A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAO XI</creatorcontrib><creatorcontrib>HU BAOFU</creatorcontrib><creatorcontrib>CHEN JIANWEN</creatorcontrib><creatorcontrib>YANG PENGFEI</creatorcontrib><creatorcontrib>XIAO RUIHUA</creatorcontrib><creatorcontrib>YAO MANWEN</creatorcontrib><title>Solid state thin film capacitor and preparation method thereof</title><description>The invention relates to a solid state thin film capacitor and a preparation method thereof. The capacitor comprises a lower electrode (1), an activated aluminium oxide thin film (2), an upper electrode (3), an anode oxide film (4) and a substrate carillon chip (5). The surface of the substrate carillon chip (5) is coated with the lower electrode (1), the activated aluminium oxide thin film (2) is arranged between the upper electrode (3) and the lower electrode (1), and a layer of anode oxide film (4) which is formed through an electrochemical method and has a self-repairing function is arranged on the interface of the activated aluminium oxide thin film (2), the upper electrode (3) and the lower electrode (1). Compared with the prior art, the structure and the preparation process of the solid state thin film capacitor are simple, the solid state thin film capacitor is suitable for large-scale batch production, the consumed raw material cost is low, a solid state thin film is used as a dielectric medium, an e</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CAPACITORS</subject><subject>CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLALzs_JTFEoLkksSVUoycjMU0jLzMlVSE4sSEzOLMkvUkjMS1EoKEotSCxKLMnMz1PITS3JyE8BKk0tSs1P42FgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcVAQ1LzUkvinf0MDYwtzQ0tjY0djYlRAwBXXzCg</recordid><startdate>20140806</startdate><enddate>20140806</enddate><creator>YAO XI</creator><creator>HU BAOFU</creator><creator>CHEN JIANWEN</creator><creator>YANG PENGFEI</creator><creator>XIAO RUIHUA</creator><creator>YAO MANWEN</creator><scope>EVB</scope></search><sort><creationdate>20140806</creationdate><title>Solid state thin film capacitor and preparation method thereof</title><author>YAO XI ; HU BAOFU ; CHEN JIANWEN ; YANG PENGFEI ; XIAO RUIHUA ; YAO MANWEN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN103971933A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CAPACITORS</topic><topic>CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>YAO XI</creatorcontrib><creatorcontrib>HU BAOFU</creatorcontrib><creatorcontrib>CHEN JIANWEN</creatorcontrib><creatorcontrib>YANG PENGFEI</creatorcontrib><creatorcontrib>XIAO RUIHUA</creatorcontrib><creatorcontrib>YAO MANWEN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAO XI</au><au>HU BAOFU</au><au>CHEN JIANWEN</au><au>YANG PENGFEI</au><au>XIAO RUIHUA</au><au>YAO MANWEN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Solid state thin film capacitor and preparation method thereof</title><date>2014-08-06</date><risdate>2014</risdate><abstract>The invention relates to a solid state thin film capacitor and a preparation method thereof. The capacitor comprises a lower electrode (1), an activated aluminium oxide thin film (2), an upper electrode (3), an anode oxide film (4) and a substrate carillon chip (5). The surface of the substrate carillon chip (5) is coated with the lower electrode (1), the activated aluminium oxide thin film (2) is arranged between the upper electrode (3) and the lower electrode (1), and a layer of anode oxide film (4) which is formed through an electrochemical method and has a self-repairing function is arranged on the interface of the activated aluminium oxide thin film (2), the upper electrode (3) and the lower electrode (1). Compared with the prior art, the structure and the preparation process of the solid state thin film capacitor are simple, the solid state thin film capacitor is suitable for large-scale batch production, the consumed raw material cost is low, a solid state thin film is used as a dielectric medium, an e</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language chi ; eng
recordid cdi_epo_espacenet_CN103971933A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
CAPACITORS
CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
ELECTRICITY
title Solid state thin film capacitor and preparation method thereof
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T11%3A50%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YAO%20XI&rft.date=2014-08-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN103971933A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true