Solid state thin film capacitor and preparation method thereof
The invention relates to a solid state thin film capacitor and a preparation method thereof. The capacitor comprises a lower electrode (1), an activated aluminium oxide thin film (2), an upper electrode (3), an anode oxide film (4) and a substrate carillon chip (5). The surface of the substrate cari...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a solid state thin film capacitor and a preparation method thereof. The capacitor comprises a lower electrode (1), an activated aluminium oxide thin film (2), an upper electrode (3), an anode oxide film (4) and a substrate carillon chip (5). The surface of the substrate carillon chip (5) is coated with the lower electrode (1), the activated aluminium oxide thin film (2) is arranged between the upper electrode (3) and the lower electrode (1), and a layer of anode oxide film (4) which is formed through an electrochemical method and has a self-repairing function is arranged on the interface of the activated aluminium oxide thin film (2), the upper electrode (3) and the lower electrode (1). Compared with the prior art, the structure and the preparation process of the solid state thin film capacitor are simple, the solid state thin film capacitor is suitable for large-scale batch production, the consumed raw material cost is low, a solid state thin film is used as a dielectric medium, an e |
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