Measuring method for capacity parameters of each chip on silicon chip

The invention provides a measuring method for capacity parameters of each chip on a silicon chip, comprising the steps of selecting a tested silicon chip, transferring a measuring probe of a capacitance meter to be above each chip on the tested silicon chip to carry out a new round of non-contact idle measurement, so as to obtain zero capacitance data of each chip in different positions on the tested silicon chip under current measurement environment; providing a to-be-tested silicon chip, enabling the measuring probe to respectively contact with each chip on the to-be-tested silicon chip to carry out formal measurement, wherein after each chip is measured, subtracting the measurement value by the zero capacitance data of the chip in the same position on the tested silicon chip, so as to obtain the actual capacitance of each tested chip on the to-be-tested silicon chip; comparing the actual capacitance of each tested chip after calculation zero setting with a code value respectively, judging whether the chip