Ion beam deposition of fluorine-based optical films

The presently disclosed technology uses dissociated fluorine (120) and one or both of hydrogen and oxygen (122) to assist the deposition of metal-fluoride thin films having low optical losses using ion sputter deposition. The dissociated fluorine and one or both of hydrogen and oxygen are injected i...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	ODE AIKO, GEORGE JASON, MAHONEY LEONARD J
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PHYSICS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The presently disclosed technology uses dissociated fluorine (120) and one or both of hydrogen and oxygen (122) to assist the deposition of metal-fluoride thin films having low optical losses using ion sputter deposition. The dissociated fluorine and one or both of hydrogen and oxygen are injected into an enclosure (116) within which the sputter deposition operations occur. The dissociated fluorine and one or both of hydrogen and oxygen assist the sputtering of metal-fluoride material from a target (104) and/or deposition of the sputtered metal-fluoride material (110) on one or more substrates (106).