Sputtering target and method for producing same
This sputtering target uses a magnesium oxide sintered body having a purity of at least 99.99% or a purity of at least 99.995%, in terms of mass %, a relative density of at least 98%, and an average crystal grain size of not more than 8 mum. The sputtering target preferably has an average crystal gr...
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creator | KUSANO EIJI SATO AKISHIGE ARAHORI TADAHISA OKAMOTO KEN SAKAMOTO MUNEAKI MIYASHITA SACHIO |
description | This sputtering target uses a magnesium oxide sintered body having a purity of at least 99.99% or a purity of at least 99.995%, in terms of mass %, a relative density of at least 98%, and an average crystal grain size of not more than 8 mum. The sputtering target preferably has an average crystal grain size of not more than 5 mum, and further, an average crystal grain size of not more than 2 mum. By using the sputtering target, a sputter film having excellent insulation resistance and homogeneity can be obtained. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN103917687A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN103917687A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN103917687A3</originalsourceid><addsrcrecordid>eNrjZNAPLigtKUktysxLVyhJLEpPLVFIzEtRyE0tychPUUjLL1IoKMpPKU0GyRcn5qbyMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4Zz9DA2NLQ3MzC3NHY2LUAAA9FysS</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Sputtering target and method for producing same</title><source>esp@cenet</source><creator>KUSANO EIJI ; SATO AKISHIGE ; ARAHORI TADAHISA ; OKAMOTO KEN ; SAKAMOTO MUNEAKI ; MIYASHITA SACHIO</creator><creatorcontrib>KUSANO EIJI ; SATO AKISHIGE ; ARAHORI TADAHISA ; OKAMOTO KEN ; SAKAMOTO MUNEAKI ; MIYASHITA SACHIO</creatorcontrib><description>This sputtering target uses a magnesium oxide sintered body having a purity of at least 99.99% or a purity of at least 99.995%, in terms of mass %, a relative density of at least 98%, and an average crystal grain size of not more than 8 mum. The sputtering target preferably has an average crystal grain size of not more than 5 mum, and further, an average crystal grain size of not more than 2 mum. By using the sputtering target, a sputter film having excellent insulation resistance and homogeneity can be obtained.</description><language>chi ; eng</language><subject>ARTIFICIAL STONE ; BASIC ELECTRIC ELEMENTS ; CEMENTS ; CERAMICS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; LIME, MAGNESIA ; METALLURGY ; REFRACTORIES ; SLAG ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TREATMENT OF NATURAL STONE</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140709&DB=EPODOC&CC=CN&NR=103917687A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140709&DB=EPODOC&CC=CN&NR=103917687A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KUSANO EIJI</creatorcontrib><creatorcontrib>SATO AKISHIGE</creatorcontrib><creatorcontrib>ARAHORI TADAHISA</creatorcontrib><creatorcontrib>OKAMOTO KEN</creatorcontrib><creatorcontrib>SAKAMOTO MUNEAKI</creatorcontrib><creatorcontrib>MIYASHITA SACHIO</creatorcontrib><title>Sputtering target and method for producing same</title><description>This sputtering target uses a magnesium oxide sintered body having a purity of at least 99.99% or a purity of at least 99.995%, in terms of mass %, a relative density of at least 98%, and an average crystal grain size of not more than 8 mum. The sputtering target preferably has an average crystal grain size of not more than 5 mum, and further, an average crystal grain size of not more than 2 mum. By using the sputtering target, a sputter film having excellent insulation resistance and homogeneity can be obtained.</description><subject>ARTIFICIAL STONE</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>REFRACTORIES</subject><subject>SLAG</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAPLigtKUktysxLVyhJLEpPLVFIzEtRyE0tychPUUjLL1IoKMpPKU0GyRcn5qbyMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4Zz9DA2NLQ3MzC3NHY2LUAAA9FysS</recordid><startdate>20140709</startdate><enddate>20140709</enddate><creator>KUSANO EIJI</creator><creator>SATO AKISHIGE</creator><creator>ARAHORI TADAHISA</creator><creator>OKAMOTO KEN</creator><creator>SAKAMOTO MUNEAKI</creator><creator>MIYASHITA SACHIO</creator><scope>EVB</scope></search><sort><creationdate>20140709</creationdate><title>Sputtering target and method for producing same</title><author>KUSANO EIJI ; SATO AKISHIGE ; ARAHORI TADAHISA ; OKAMOTO KEN ; SAKAMOTO MUNEAKI ; MIYASHITA SACHIO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN103917687A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2014</creationdate><topic>ARTIFICIAL STONE</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>REFRACTORIES</topic><topic>SLAG</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>KUSANO EIJI</creatorcontrib><creatorcontrib>SATO AKISHIGE</creatorcontrib><creatorcontrib>ARAHORI TADAHISA</creatorcontrib><creatorcontrib>OKAMOTO KEN</creatorcontrib><creatorcontrib>SAKAMOTO MUNEAKI</creatorcontrib><creatorcontrib>MIYASHITA SACHIO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KUSANO EIJI</au><au>SATO AKISHIGE</au><au>ARAHORI TADAHISA</au><au>OKAMOTO KEN</au><au>SAKAMOTO MUNEAKI</au><au>MIYASHITA SACHIO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Sputtering target and method for producing same</title><date>2014-07-09</date><risdate>2014</risdate><abstract>This sputtering target uses a magnesium oxide sintered body having a purity of at least 99.99% or a purity of at least 99.995%, in terms of mass %, a relative density of at least 98%, and an average crystal grain size of not more than 8 mum. The sputtering target preferably has an average crystal grain size of not more than 5 mum, and further, an average crystal grain size of not more than 2 mum. By using the sputtering target, a sputter film having excellent insulation resistance and homogeneity can be obtained.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE |
title | Sputtering target and method for producing same |
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