Sputtering target and method for producing same

This sputtering target uses a magnesium oxide sintered body having a purity of at least 99.99% or a purity of at least 99.995%, in terms of mass %, a relative density of at least 98%, and an average crystal grain size of not more than 8 mum. The sputtering target preferably has an average crystal gr...

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Bibliographische Detailangaben
Hauptverfasser:	KUSANO EIJI, SATO AKISHIGE, ARAHORI TADAHISA, OKAMOTO KEN, SAKAMOTO MUNEAKI, MIYASHITA SACHIO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	This sputtering target uses a magnesium oxide sintered body having a purity of at least 99.99% or a purity of at least 99.995%, in terms of mass %, a relative density of at least 98%, and an average crystal grain size of not more than 8 mum. The sputtering target preferably has an average crystal grain size of not more than 5 mum, and further, an average crystal grain size of not more than 2 mum. By using the sputtering target, a sputter film having excellent insulation resistance and homogeneity can be obtained.