High die strength semiconductor wafer processing method and system

Embodiments of methods and systems for processing a semiconductor wafer are described. In one embodiment, a method for processing a semiconductor wafer involves performing laser stealth dicing on the semiconductor wafer to form a stealth dicing layer within the semiconductor wafer and after performi...

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Bibliographische Detailangaben
Hauptverfasser: GUIDO ALBERMANN, THOMAS ROHLEDER, HARTMUT BUENNING, MARTIN LAPKE, SASCHA MOELLER
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:Embodiments of methods and systems for processing a semiconductor wafer are described. In one embodiment, a method for processing a semiconductor wafer involves performing laser stealth dicing on the semiconductor wafer to form a stealth dicing layer within the semiconductor wafer and after performing laser stealth dicing, cleaning the semiconductor wafer from a back-side surface of the semiconductor wafer with a blade to remove at least a portion of the stealth dicing layer. Other embodiments are also described.