Metal oxide semiconductor diode element with terminal structure and manufacturing method for metal oxide semiconductor diode element

The invention provides a metal oxide semiconductor diode element with a terminal structure and a manufacturing method for the metal oxide semiconductor diode element. The element comprises a substrate, a gate oxide layer, a polycrystalline silicon layer and a shielding oxide layer, wherein the subst...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	GAO LONGQING, GUO HONGXIN, CHEN MEILING, ZHAO GUOLIANG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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