Metal oxide semiconductor diode element with terminal structure and manufacturing method for metal oxide semiconductor diode element

The invention provides a metal oxide semiconductor diode element with a terminal structure and a manufacturing method for the metal oxide semiconductor diode element. The element comprises a substrate, a gate oxide layer, a polycrystalline silicon layer and a shielding oxide layer, wherein the substrate is provided with a plurality of platform areas; a P-type semiconductor area etched with a shallow trench area is arranged on the surface of an N-type epitaxial layer, and surrounds the platform areas to enlarge the metal contact area and reduce a forward voltage drop value (Vf); the gate oxide layer is positioned on the surfaces of the platform areas; the polycrystalline silicon layer is positioned on the gate oxide layer; the shielding oxide layer is positioned on the middle part of the polycrystalline silicon layer. The terminal structure comprises a trench, at least one oxide layer positioned in the trench and a sidewall polycrystalline silicon layer positioned on the oxide layer on the sidewall of the tren