HIGH FREQUENCY INDUCTOR STRUCTURE HAVING INCREASED INDUCTANCE DENSITY AND QUALITY FACTOR

HIGH FREQUENCY INDUCTOR STRUCTURE HAVING INCREASED INDUCTANCE DENSITY AND QUALITY FACTOR

Disclosed is an inductor structure. The inductor structure includes a base material, a plurality of bottom spiral conductors disposed on the base material, and at least one top spiral conductor disposed on the at least one bottom spiral conductor, and dielectric material separating the bottom, middl...

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Bibliographische Detailangaben
Hauptverfasser: PHILIPPE P.D.GIRARD, ROBERT A.GROVES, VENKATA N.R.VANUKURU, SRIKUMAR KONDURU
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Disclosed is an inductor structure. The inductor structure includes a base material, a plurality of bottom spiral conductors disposed on the base material, and at least one top spiral conductor disposed on the at least one bottom spiral conductor, and dielectric material separating the bottom, middle and top spiral conductors. A current path for high frequency operation is disclosed. Also disclosed is a method for determining the number of turns in the at least one top spiral conductor and the at least one bottom spiral conductor.