Semiconductor device and method of manufacturing the same

The invention provides a semiconductor device and a method of manufacturing the same, wherein the semiconductor device is low in thermal resistance, high in density and good in heat resistance. A semiconductor device having a substrate including a plurality of external terminals on a rear surface an...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SATO HIDENARI, OOIDA MITSURU, TOMONAGA YOSHIYUKI, WATANABE KATSUMI
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention provides a semiconductor device and a method of manufacturing the same, wherein the semiconductor device is low in thermal resistance, high in density and good in heat resistance. A semiconductor device having a substrate including a plurality of external terminals on a rear surface and a plurality of bonding terminals electrically connected to the plurality of external terminals on a front surface, a semiconductor chip mounted on the front surface of the substrate, a surface of the chip including a plurality of bonding pads, a plurality of bonding wires connecting between the plurality of bonding pads or between the plurality of bonding terminals and the plurality of bonding wires respectively, a first sealing layer sealing the front surface of the substrate, the plurality of bonding wires and the semiconductor chip, and a second sealing layer comprised of the same material as the first sealing, the second sealing layer being formed above the first sealing layer.