Novel silicon wafer bearing device applied to wafer silicon dioxide back sealing membrane growth process, and growth method
The invention provides a novel silicon wafer bearing device applied to a wafer silicon dioxide back sealing membrane growth process, and a growth method. The device comprises an upper base and a lower base that are round, as well as three bearing rods which are installed between the upper base and t...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a novel silicon wafer bearing device applied to a wafer silicon dioxide back sealing membrane growth process, and a growth method. The device comprises an upper base and a lower base that are round, as well as three bearing rods which are installed between the upper base and the lower base; and a plurality of bearing grooves are uniformly distributed on each bearing bar. The method for growing a silicon dioxide back sealing membrane by adopting the silicon wafer bearing device includes the following steps that: (1) a plurality of silicon wafer bearing devices are mounted at a deposition cavity of a chemical vapor deposition horizontal furnace, and silicon wafers are led into the silicon wafer bearing devices; (2) temperature and pressure inside the deposition cavity are set, flow quantity of tetraethyl orthosilicate steam is set, and deposition time is controlled; (3) after the deposition, cavity purification is carried out, and the silicon wafers are taken out, uniformity in the wafers |
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