Sputtering apparatus and method for forming a transmissive conductive layer of a light emitting device
According to one aspect of the present invention, provided are a method for manufacturing a nitride semiconductor light emitting device and a nitride semiconductor light emitting device manufactured thereby. The method for manufacturing the nitride semiconductor light emitting device comprises the s...
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| creator | SHIN YONGUL KIM GI-BUM HUR WON-GOO |
| description | According to one aspect of the present invention, provided are a method for manufacturing a nitride semiconductor light emitting device and a nitride semiconductor light emitting device manufactured thereby. The method for manufacturing the nitride semiconductor light emitting device comprises the steps of: forming first and second conductive-type nitride semiconductor layers on a substrate to form a light emitting structure including an active layer between the first and second conductive-type nitride semiconductor layers; successively forming the first conductive-type nitride semiconductor layer, the active layer, and the second conductive-type nitride semiconductor layer; forming a first electrode connected to the first conductive type nitride semiconductor layer; forming a photoresist film on the second conductive-type nitride semiconductor layer to expose a portion of the second conductive-type nitride semiconductor layer; and, after a reflective metal layer serving as a second electrode and a barrier la |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN103814430A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN103814430A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN103814430A3</originalsourceid><addsrcrecordid>eNqNy70KwjAUBeAuDqK-w_UBhJZ0cJVScXLRvVySmzaQP5Kbgm-vER_A4XDO8J1tox-xMFMyfgaMERNyyYBegSNeggIdUo37AuCEPjuTs1kJZPCqSK7T4osSBP0h1swLAznDXD-KViNp32w02kyHX--a43V8DrcTxTBRjijJE0_DvWvFuet70V7EP-YNuOM_6Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Sputtering apparatus and method for forming a transmissive conductive layer of a light emitting device</title><source>esp@cenet</source><creator>SHIN YONGUL ; KIM GI-BUM ; HUR WON-GOO</creator><creatorcontrib>SHIN YONGUL ; KIM GI-BUM ; HUR WON-GOO</creatorcontrib><description>According to one aspect of the present invention, provided are a method for manufacturing a nitride semiconductor light emitting device and a nitride semiconductor light emitting device manufactured thereby. The method for manufacturing the nitride semiconductor light emitting device comprises the steps of: forming first and second conductive-type nitride semiconductor layers on a substrate to form a light emitting structure including an active layer between the first and second conductive-type nitride semiconductor layers; successively forming the first conductive-type nitride semiconductor layer, the active layer, and the second conductive-type nitride semiconductor layer; forming a first electrode connected to the first conductive type nitride semiconductor layer; forming a photoresist film on the second conductive-type nitride semiconductor layer to expose a portion of the second conductive-type nitride semiconductor layer; and, after a reflective metal layer serving as a second electrode and a barrier la</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140521&DB=EPODOC&CC=CN&NR=103814430A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140521&DB=EPODOC&CC=CN&NR=103814430A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHIN YONGUL</creatorcontrib><creatorcontrib>KIM GI-BUM</creatorcontrib><creatorcontrib>HUR WON-GOO</creatorcontrib><title>Sputtering apparatus and method for forming a transmissive conductive layer of a light emitting device</title><description>According to one aspect of the present invention, provided are a method for manufacturing a nitride semiconductor light emitting device and a nitride semiconductor light emitting device manufactured thereby. The method for manufacturing the nitride semiconductor light emitting device comprises the steps of: forming first and second conductive-type nitride semiconductor layers on a substrate to form a light emitting structure including an active layer between the first and second conductive-type nitride semiconductor layers; successively forming the first conductive-type nitride semiconductor layer, the active layer, and the second conductive-type nitride semiconductor layer; forming a first electrode connected to the first conductive type nitride semiconductor layer; forming a photoresist film on the second conductive-type nitride semiconductor layer to expose a portion of the second conductive-type nitride semiconductor layer; and, after a reflective metal layer serving as a second electrode and a barrier la</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNy70KwjAUBeAuDqK-w_UBhJZ0cJVScXLRvVySmzaQP5Kbgm-vER_A4XDO8J1tox-xMFMyfgaMERNyyYBegSNeggIdUo37AuCEPjuTs1kJZPCqSK7T4osSBP0h1swLAznDXD-KViNp32w02kyHX--a43V8DrcTxTBRjijJE0_DvWvFuet70V7EP-YNuOM_6Q</recordid><startdate>20140521</startdate><enddate>20140521</enddate><creator>SHIN YONGUL</creator><creator>KIM GI-BUM</creator><creator>HUR WON-GOO</creator><scope>EVB</scope></search><sort><creationdate>20140521</creationdate><title>Sputtering apparatus and method for forming a transmissive conductive layer of a light emitting device</title><author>SHIN YONGUL ; KIM GI-BUM ; HUR WON-GOO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN103814430A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>SHIN YONGUL</creatorcontrib><creatorcontrib>KIM GI-BUM</creatorcontrib><creatorcontrib>HUR WON-GOO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHIN YONGUL</au><au>KIM GI-BUM</au><au>HUR WON-GOO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Sputtering apparatus and method for forming a transmissive conductive layer of a light emitting device</title><date>2014-05-21</date><risdate>2014</risdate><abstract>According to one aspect of the present invention, provided are a method for manufacturing a nitride semiconductor light emitting device and a nitride semiconductor light emitting device manufactured thereby. The method for manufacturing the nitride semiconductor light emitting device comprises the steps of: forming first and second conductive-type nitride semiconductor layers on a substrate to form a light emitting structure including an active layer between the first and second conductive-type nitride semiconductor layers; successively forming the first conductive-type nitride semiconductor layer, the active layer, and the second conductive-type nitride semiconductor layer; forming a first electrode connected to the first conductive type nitride semiconductor layer; forming a photoresist film on the second conductive-type nitride semiconductor layer to expose a portion of the second conductive-type nitride semiconductor layer; and, after a reflective metal layer serving as a second electrode and a barrier la</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Sputtering apparatus and method for forming a transmissive conductive layer of a light emitting device |
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