Sputtering apparatus and method for forming a transmissive conductive layer of a light emitting device

According to one aspect of the present invention, provided are a method for manufacturing a nitride semiconductor light emitting device and a nitride semiconductor light emitting device manufactured thereby. The method for manufacturing the nitride semiconductor light emitting device comprises the steps of: forming first and second conductive-type nitride semiconductor layers on a substrate to form a light emitting structure including an active layer between the first and second conductive-type nitride semiconductor layers; successively forming the first conductive-type nitride semiconductor layer, the active layer, and the second conductive-type nitride semiconductor layer; forming a first electrode connected to the first conductive type nitride semiconductor layer; forming a photoresist film on the second conductive-type nitride semiconductor layer to expose a portion of the second conductive-type nitride semiconductor layer; and, after a reflective metal layer serving as a second electrode and a barrier la