Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof

Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof

Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical...

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Bibliographische Detailangaben
Hauptverfasser: JOHN ANTHONY MARSELLA, JO-ANN THERESA SCHWARTZ, STEVEN CHARLES WINCHESTER, SAIFI USMANI, XIAOBO SHI, LAURA LEDE NBACH, JAE OUK CHOO, JAMES ALLEN SCHLUETER, JOHN EDWARD QUINCY HUGHES, HONGJUN ZHOU, DANIEL HERNANDEZ CASTILLO, II
Format: Patent
Sprache:chi ; eng
Schlagworte:
ADHESIVES
CHEMISTRY
COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS
DYES
INORGANIC CHEMISTRY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SKI WAXES
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Beschreibung
Zusammenfassung:Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.