Integrated circuit device and method of manufacturing same
The present invention discloses an integrated circuit device and a method for manufacturing the integrated circuit device. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit device. In an embodiment, the method achieves improved control by for...
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| Hauptverfasser: | , , , |
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The present invention discloses an integrated circuit device and a method for manufacturing the integrated circuit device. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit device. In an embodiment, the method achieves improved control by forming a lightly doped source and drain (LDD) region that acts as an etch stop. The LDD region may act as an etch stop during an etching process implemented to form a recess in the substrate that defines a source and drain region of the device. |
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