Passivation layer of P-type crystalline silicon solar cell and passivation technology for passivation layer

The invention discloses a passivation layer of a P-type crystalline silicon solar cell and a passivation technology for the passivation layer. The passivation layer consists of erbium oxide. The passivation technology for the passivation layer comprises the following steps: firstly depositing an erbium oxide passivation layer at the P-type side of the shady face of a P-type crystalline silicon substrate after an antireflection film process is finished on P-type crystalline silicon during manufacturing of the crystalline silicon solar cell, then, performing annealing treatment; forming an SiO2 buffer layer between the passivation layer and the P-type side of the shady face of the P-type crystalline silicon substrate to finish the preparation of the passivation layer. According to the passivation layer of the P-type crystalline silicon solar cell and the passivation technology for the passivation layer disclosed by the invention, the erbium oxide is used as the passivation layer of the crystalline silicon solar