High-voltage integrated capacitor and fabrication method thereof

The invention relates to an integrated-circuit capacitor which includes a support layer with an internal integrated circuit structure. The support layer includes a lower plate; a bond pad on the support layer; an upper plate disposed on the support layer, the upper plate being arranged above the lower plate; a dielectric layer, at least part of which is between the lower and upper plates; and a passivation layer, at least part of which covers at least part of the upper plate and part of the dielectric layer. The passivation layer has a surface; a first opening extends from the surface through the passivation and dielectric layers to the lower plate, and a second opening extends from the surface through the passivation layer to the upper plate. The invention also relates to a method for fabricating the integrated-circuit capacitor.