Finfet device with silicided source-drain regions and method of making same using a two step anneal

A thermal annealing flow process includes the steps of: depositing a metal or metal alloy on a silicon semiconductor structure, performing a first annealing of a rapid thermal anneal (RTA) type to produce a metal rich phase in a portion of the silicon semiconductor structure, removing unreacted metal or metal alloy and performing a second annealing as a millisecond annealing at a temperature that is below a melt temperature of the silicon material present in the silicon semiconductor structure.