Pure zinc oxide ceramic sputtering target material and preparation method thereof
The invention relates to a pure zinc oxide ceramic sputtering target material and a preparation method thereof. The pure zinc oxide ceramic sputtering target material is characterized in that the structural formula is ZnO, wherein x is greater than 0.01 and smaller than 0.1; the volume resistivity i...
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| creator | YANG XIAOLIN SONG QIANG HU QIANGNAN LIU WEI LIU XIAONING LIU BINGNING LIU DONGPING HAN JIANHUA FANG XICHENG WANG YINGWANG ZHENG WEIXING ZHANG HONGMEI |
| description | The invention relates to a pure zinc oxide ceramic sputtering target material and a preparation method thereof. The pure zinc oxide ceramic sputtering target material is characterized in that the structural formula is ZnO, wherein x is greater than 0.01 and smaller than 0.1; the volume resistivity is 10-20 m(omega)/cm; the purity is not lower than 99.99 percent; the particle size is 3-5 [mu]m; the relative density is not lower than 99.5 percent. Compared with the prior art, the pure zinc oxide ceramic sputtering target material has the following benefits: nitrogen is used as a sintering control atmosphere, and the preparation method of the high-electroconductivity pure zinc oxide target material is provided; the high-electroconductivity pure zinc oxide target material is characterized in that the structural formula is ZnO, and the x is greater than 0.01 and smaller than 0.1; a stoichiometric ratio error does exists; the volume resistivity is 10-20 m(omega)/cm; the purity is 99.99 percent; the partic |
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The pure zinc oxide ceramic sputtering target material is characterized in that the structural formula is ZnO<1-x>, wherein x is greater than 0.01 and smaller than 0.1; the volume resistivity is 10-20 m(omega)/cm; the purity is not lower than 99.99 percent; the particle size is 3-5 [mu]m; the relative density is not lower than 99.5 percent. Compared with the prior art, the pure zinc oxide ceramic sputtering target material has the following benefits: nitrogen is used as a sintering control atmosphere, and the preparation method of the high-electroconductivity pure zinc oxide target material is provided; the high-electroconductivity pure zinc oxide target material is characterized in that the structural formula is ZnO<1-x>, and the x is greater than 0.01 and smaller than 0.1; a stoichiometric ratio error does exists; the volume resistivity is 10-20 m(omega)/cm; the purity is 99.99 percent; the partic</description><language>chi ; eng</language><subject>ARTIFICIAL STONE ; CEMENTS ; CERAMICS ; CHEMISTRY ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; LIME, MAGNESIA ; METALLURGY ; REFRACTORIES ; SLAG ; TREATMENT OF NATURAL STONE</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140416&DB=EPODOC&CC=CN&NR=103724008A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140416&DB=EPODOC&CC=CN&NR=103724008A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YANG XIAOLIN</creatorcontrib><creatorcontrib>SONG QIANG</creatorcontrib><creatorcontrib>HU QIANGNAN</creatorcontrib><creatorcontrib>LIU WEI</creatorcontrib><creatorcontrib>LIU XIAONING</creatorcontrib><creatorcontrib>LIU BINGNING</creatorcontrib><creatorcontrib>LIU DONGPING</creatorcontrib><creatorcontrib>HAN JIANHUA</creatorcontrib><creatorcontrib>FANG XICHENG</creatorcontrib><creatorcontrib>WANG YINGWANG</creatorcontrib><creatorcontrib>ZHENG WEIXING</creatorcontrib><creatorcontrib>ZHANG HONGMEI</creatorcontrib><title>Pure zinc oxide ceramic sputtering target material and preparation method thereof</title><description>The invention relates to a pure zinc oxide ceramic sputtering target material and a preparation method thereof. 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The pure zinc oxide ceramic sputtering target material is characterized in that the structural formula is ZnO<1-x>, wherein x is greater than 0.01 and smaller than 0.1; the volume resistivity is 10-20 m(omega)/cm; the purity is not lower than 99.99 percent; the particle size is 3-5 [mu]m; the relative density is not lower than 99.5 percent. Compared with the prior art, the pure zinc oxide ceramic sputtering target material has the following benefits: nitrogen is used as a sintering control atmosphere, and the preparation method of the high-electroconductivity pure zinc oxide target material is provided; the high-electroconductivity pure zinc oxide target material is characterized in that the structural formula is ZnO<1-x>, and the x is greater than 0.01 and smaller than 0.1; a stoichiometric ratio error does exists; the volume resistivity is 10-20 m(omega)/cm; the purity is 99.99 percent; the partic</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ARTIFICIAL STONE CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE LIME, MAGNESIA METALLURGY REFRACTORIES SLAG TREATMENT OF NATURAL STONE |
| title | Pure zinc oxide ceramic sputtering target material and preparation method thereof |
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