Pure zinc oxide ceramic sputtering target material and preparation method thereof
The invention relates to a pure zinc oxide ceramic sputtering target material and a preparation method thereof. The pure zinc oxide ceramic sputtering target material is characterized in that the structural formula is ZnO, wherein x is greater than 0.01 and smaller than 0.1; the volume resistivity i...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a pure zinc oxide ceramic sputtering target material and a preparation method thereof. The pure zinc oxide ceramic sputtering target material is characterized in that the structural formula is ZnO, wherein x is greater than 0.01 and smaller than 0.1; the volume resistivity is 10-20 m(omega)/cm; the purity is not lower than 99.99 percent; the particle size is 3-5 [mu]m; the relative density is not lower than 99.5 percent. Compared with the prior art, the pure zinc oxide ceramic sputtering target material has the following benefits: nitrogen is used as a sintering control atmosphere, and the preparation method of the high-electroconductivity pure zinc oxide target material is provided; the high-electroconductivity pure zinc oxide target material is characterized in that the structural formula is ZnO, and the x is greater than 0.01 and smaller than 0.1; a stoichiometric ratio error does exists; the volume resistivity is 10-20 m(omega)/cm; the purity is 99.99 percent; the partic |
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