MOCVD epitaxy processing method of AlInGaN quaternary alloy thin-film material

An MOCVD epitaxy processing method of an AlInGaN quaternary alloy thin-film material belongs to the technical field of semi-conductors. The AlInGaN quaternary alloy thin-film material is formed by virtue of using a metal organic chemical vapor deposition (MOCVD) epitaxy technology and employing a method of alternatively matching and growing ternary alloy InGaN and AlGaN materials in a thickness of atomic level. The AlInGaN quaternary alloy thin-film material prepared by using the aforementioned technology can achieve the following parameter indexes: (1) the half-peak height and width of an X-ray diffraction (XRD) (002) symmetry plane < 240 seconds; (2) the material surface roughness < 1 nm; and (3) the c-face lattice constant mismatch degree with respect to GaN < 0.5%.