Process for manufacturing semiconductor devices, such as super-barrier sbr rectifiers

A process for manufacturing a semiconductor device, wherein a semiconductor layer (32) is formed on a body (30) of semiconductor material; a first mask (34; 34, 33a) is formed on the semiconductor layer; a first conductive region (37) is implanted in the body using the first mask; a second mask (38; 61) is formed laterally and complementarily to the first mask, at least in a projection in a plane parallel to the surface of the body; a second conductive region (40) is implanted in the body (30) using the second mask, in an adjacent and complementary position to the first conductive region (37) ; spacers are formed on the sides of the second mask region (38; 61), to form a third mask (47; 67) aligned to the second mask; and, using the third mask, portions of the semiconductor layer (32) are removed to form a gate region (32a).