Diode element and detecting device

Provided is a diode element, a detecting device, and the like which solve problems of a conventional lateral diode element. In the conventional element, a semiconductor interface appears in current path between two electrodes on a surface thereof, and thus noise caused by the interface is large. The diode element includes: a first-conductive-type low carrier concentration layer (103); a first-conductive-type high carrier concentration layer (102); and a Schottky electrode (104) and an ohmic electrode (105) which are formed on a semiconductor surface. The low carrier layer (103) has a carrier concentration that is lower than that of the high carrier layer (102). The diode element includes a first-conductive-type impurity introducing region (106) formed below the ohmic electrode (105), and includes a second-conductive-type impurity introducing region (107) so as not to be in electrical contact with the Schottky electrode (104) on the semiconductor surface between the Schottky electrode (104) and the ohmic elect