Light emitting diode
A light emitting diode (LED) is disclosed. The LED (100A) includes a first-conductive-type semiconductor layer (120), a second-conductive-type semiconductor layer (150), and an active layer (122) interposed between the first-conductive-type semiconductor layer and the second-conductive-type semicond...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | A light emitting diode (LED) is disclosed. The LED (100A) includes a first-conductive-type semiconductor layer (120), a second-conductive-type semiconductor layer (150), and an active layer (122) interposed between the first-conductive-type semiconductor layer and the second-conductive-type semiconductor layer. The second-conductive-type semiconductor layer includes an electron blocking layer (EBL 130) closely disposed to the active layer and having a pattern with a plurality of elements (131) spaced apart from each other. |
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