Leakage current prevention structure and manufacturing method thereof

Leakage current prevention structure and manufacturing method thereof

The invention provides a leakage current prevention structure and a manufacturing method thereof. The leakage current prevention structure comprises a substrate, a first III-V group compound layer, a second III-V group compound layer and at least one semiconductor component, the first III-V group co...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: XIE YANZHANG
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The invention provides a leakage current prevention structure and a manufacturing method thereof. The leakage current prevention structure comprises a substrate, a first III-V group compound layer, a second III-V group compound layer and at least one semiconductor component, the first III-V group compound layer is arranged on the substrate, the second III-V group compound layer is arranged on the first III-V group compound layer, and the semiconductor components are arranged on the second III-V group compound layer. The first III-V group compound layer contacts with the second III-V group compound layer to collectively form a high resistance layer, so that leakage current generated by the semiconductor components is prevented from flowing to the substrate.