FinFET with high mobility and strain channel

FinFET with high mobility and strain channel

An integrated circuit device includes a fin at least partially embedded in a shallow trench isolation (STI) region and extending between a source and a drain. The fin is formed from a first semiconductor material and has a trimmed portion between first and second end portions. A cap layer, which is...

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Bibliographische Detailangaben
Hauptverfasser: CHUN-SHENG LIANG, CHUN-LIANG SHEN, KUOIANG TING, CHI-HSI WU, KUOING TSAI, HOU-JU LI, KAO-TING LAI
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An integrated circuit device includes a fin at least partially embedded in a shallow trench isolation (STI) region and extending between a source and a drain. The fin is formed from a first semiconductor material and has a trimmed portion between first and second end portions. A cap layer, which is formed from a second semiconductor material, is disposed over the trimmed portion of the fin to form a high mobility channel. A gate electrode structure is formed over the high mobility channel and between the first and second end portions. The invention provides a FinFET with high mobility and a strain channel.