Method for modeling etching yield in plasma body etching process

The invention relates to a method for modeling an etching yield in the evolution simulation of a plasma body etching surface and belongs to the technical field of process simulation of an etching surface in a micro-electronic processing technology. The method comprises the following steps of: parameterizing an etching yield model of various ions; acquiring optimal parameters in the etching yield model by using an optimization algorithm; in an optimization process, selecting a plurality of specific positions on the surface of a groove, and by comparing simulation etching rates at different time points in an evolution process with an actual etching rate, calculating the goodness (adaptive value) of each model parameter as a basis of selecting the optimization algorithm and generating a next model parameter set; substituting the obtained model parameters into a model parameterizing formula so as to obtain the etching yield model. By the adoption of the method, the parameters of the etching yield model of various