Chemical dry-method etching method and semiconductor device forming method
The invention provides a chemical dry-method etching method and a semiconductor device forming method. The chemical dry-method etching method comprises the following steps that a chemical dry-method etching machine is provided, wherein the chemical dry-method etching machine comprises a quartz glass...
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| creator | ZHANG CHENG BAO ZHONGCHENG |
| description | The invention provides a chemical dry-method etching method and a semiconductor device forming method. The chemical dry-method etching method comprises the following steps that a chemical dry-method etching machine is provided, wherein the chemical dry-method etching machine comprises a quartz glass tube; the quartz glass tube is subjected to dehydroxylation processing; the chemical dry-method etching machine is used for conducting dry-method etching. According to the chemical dry-method etching method and the semiconductor device forming method, the quartz glass tube in CDE equipment can be prevented from rupturing, and the etching rate and the yield of wafers can be increased. |
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The chemical dry-method etching method comprises the following steps that a chemical dry-method etching machine is provided, wherein the chemical dry-method etching machine comprises a quartz glass tube; the quartz glass tube is subjected to dehydroxylation processing; the chemical dry-method etching machine is used for conducting dry-method etching. According to the chemical dry-method etching method and the semiconductor device forming method, the quartz glass tube in CDE equipment can be prevented from rupturing, and the etching rate and the yield of wafers can be increased.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20131009&DB=EPODOC&CC=CN&NR=103346066A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20131009&DB=EPODOC&CC=CN&NR=103346066A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHANG CHENG</creatorcontrib><creatorcontrib>BAO ZHONGCHENG</creatorcontrib><title>Chemical dry-method etching method and semiconductor device forming method</title><description>The invention provides a chemical dry-method etching method and a semiconductor device forming method. The chemical dry-method etching method comprises the following steps that a chemical dry-method etching machine is provided, wherein the chemical dry-method etching machine comprises a quartz glass tube; the quartz glass tube is subjected to dehydroxylation processing; the chemical dry-method etching machine is used for conducting dry-method etching. According to the chemical dry-method etching method and the semiconductor device forming method, the quartz glass tube in CDE equipment can be prevented from rupturing, and the etching rate and the yield of wafers can be increased.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPByzkjNzUxOzFFIKarUzU0tychPUUgtSc7IzEtXgHIT81IUikGq8vNSSpNL8osUUlLLMpNTFdLyi3IR6ngYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSbyzn6GBsbGJmYGZmaMxMWoALa81Ng</recordid><startdate>20131009</startdate><enddate>20131009</enddate><creator>ZHANG CHENG</creator><creator>BAO ZHONGCHENG</creator><scope>EVB</scope></search><sort><creationdate>20131009</creationdate><title>Chemical dry-method etching method and semiconductor device forming method</title><author>ZHANG CHENG ; BAO ZHONGCHENG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN103346066A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2013</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHANG CHENG</creatorcontrib><creatorcontrib>BAO ZHONGCHENG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHANG CHENG</au><au>BAO ZHONGCHENG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Chemical dry-method etching method and semiconductor device forming method</title><date>2013-10-09</date><risdate>2013</risdate><abstract>The invention provides a chemical dry-method etching method and a semiconductor device forming method. The chemical dry-method etching method comprises the following steps that a chemical dry-method etching machine is provided, wherein the chemical dry-method etching machine comprises a quartz glass tube; the quartz glass tube is subjected to dehydroxylation processing; the chemical dry-method etching machine is used for conducting dry-method etching. According to the chemical dry-method etching method and the semiconductor device forming method, the quartz glass tube in CDE equipment can be prevented from rupturing, and the etching rate and the yield of wafers can be increased.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Chemical dry-method etching method and semiconductor device forming method |
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