Chemical dry-method etching method and semiconductor device forming method

The invention provides a chemical dry-method etching method and a semiconductor device forming method. The chemical dry-method etching method comprises the following steps that a chemical dry-method etching machine is provided, wherein the chemical dry-method etching machine comprises a quartz glass tube; the quartz glass tube is subjected to dehydroxylation processing; the chemical dry-method etching machine is used for conducting dry-method etching. According to the chemical dry-method etching method and the semiconductor device forming method, the quartz glass tube in CDE equipment can be prevented from rupturing, and the etching rate and the yield of wafers can be increased.