Preparation method of CdS/SiO2 nanometer transparent composite film

The invention discloses a preparation method of a CdS/SiO2 nanometer transparent composite film, belonging to the technical field of preparation of semiconductor nanometer composite film materials. A CdS quantum dot nanometer composite film is prepared by radio frequency magnetron sputtering equipment through a CdS/SiO2 co-sputtering method. Compared with a chemical bath method, the sputtering method has the advantages of fastness, low temperature and the like and is capable of controlling the density and thickness of the composite film through power and time. The CdS quantum dot nanometer composite film is prepared by the sputtering method in the following two steps: firstly, carrying out radio frequency magnetron sputtering and depositing on an amorphous CdS/SiO2 composite film on an ultrahigh vacuum magnetron sputtering apparatus; annealing the deposited amorphous film and sulfur in N2 to form a polycrystalline film. SiO2 has a silicon hydroxyl and also has high transmissivity and low diffusivity, thereby