Bipolar junction transistor in silicon carbide with improved breakdown voltage

New designs for silicon carbide (SiC) bipolar junction transistors (BJTs) and new methods of manufacturing such SiC BJTs are provided. The SiC BJT comprises a collector region (220), a base region (240) and an emitter region (260). Further, a surface passivation layer is deposited between an emitter contact for contacting the emitter region and a base contact for contacting the base region. The deposited surface passivation layer induces the formation of a depletion region under said surface passivation layer in the extrinsic part of said base region. Further, the SiC BJT comprises a surface gatearranged at the deposited surface passivation layer. The surface gate is configured to apply a negative electric potential to the deposited surface passivation layer with respect to the electric potential in the base region. The present invention is advantageous in that it provides SiC BJTs with improved blocking capabilities.