Manufacture method of semiconductor device and semiconductor device

The invention relates to the technical field of communication, in particular to a manufacture method of a semiconductor device and the semiconductor device. The manufacture method of the semiconductor device comprises manufacturing at least two active areas on the area without a field oxide layer on a substrate of a base material; designing a graph according to the semiconductor device, after growing a sacrificed oxide layer, respectively injecting manufacture ions of a read-only memory into the at least two active areas, and forming at least two read-only memory areas; ensuring that overlap does not exist between edges of adjacent areas of the at least two read-only memory areas and field oxide layers between the at least two read-only memory areas; manufacturing a grid electrode, a source leakage electrode, a dielectric layer and a metal layer after removing the sacrificed oxide layer. When the manufacture method of the semiconductor device and the semiconductor device are used, the field oxide layer is pre