Device and method for growing gallium nitride single crystal by using suspending lining sleeve ammonothermal method

The invention discloses a device and a method for growing a gallium nitride single crystal by using a suspending lining sleeve ammonothermal method. The device comprises an autoclave, a lining sleeve, a resistance furnace and a cooling container, wherein the cooling container is used for cooling and transferring the lining sleeve; and the cooling container is a liquid nitrogen tank or a Dewar flask. The method comprises the following steps: (1) adding a substrate into the lining sleeve, welding a top cover and an orifice of the lining sleeve, placing in a vacuum glove box, adding a halogenated ammonium salt and ammonia liquid through a charging pipe, sealing the charging pipe, placing the charging pipe into the cooling container to which a refrigerant is filled in advance, and sealing the cooling container; (2) filling the ammonia liquid into the cooled autoclave; and (3) taking out the cooled lining sleeve, placing the cooled lining sleeve into the autoclave, sealing the autoclave, placing the autoclave into