Method of reading memory cells with different threshold voltages without variation of word line voltage and nonvolatile memory device using the same

A soft-decision read method of a nonvolatile memory device includes receiving a soft-decision read command, applying a read voltage to a selected word line, pre-charging bit lines respectively connected to selected memory cells of the selected word line, continuously sensing states of the selected m...

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Bibliographische Detailangaben
Hauptverfasser: LEE JU SEOK, CHOI KIHWAN, JOO SANG-HYUN, SONG KIWHAN
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:A soft-decision read method of a nonvolatile memory device includes receiving a soft-decision read command, applying a read voltage to a selected word line, pre-charging bit lines respectively connected to selected memory cells of the selected word line, continuously sensing states of the selected memory cells. The pre-charged voltages of the bit lines and the read voltage supplied to the selected word line are not varied during the sensing states of the selected memory cells.