Complementary metal-oxide-semiconductor transistor (CMOS) broadband low-noise amplifier adopting noise cancellation technology

The invention discloses a complementary metal-oxide-semiconductor transistor (CMOS) broadband low-noise amplifier adopting noise cancellation technology. The CMOS broadband low-noise amplifier structurally comprises a signal input stage and a noise cancellation stage, wherein the signal input stage is composed of an inductance Li, a resistance RF, an N-channel metal oxide semiconductor (NMOS) tube M1-a and a P-channel metal oxide semiconductor (PMOS) tube M1-b, and the PMOS tube M1-b and the NMOS tube M1-a form an automatic biasing phase inverter, negative feedback of the resistance RF is utilized by the signal input stage to achieve matching of input impedance, and the inductance Li provides resonance at the input end. The resonance is used for canceling capacitive parasitism of the input end, and the noise cancellation stage is composed of a resistance R1, a capacitance C1 and two NMOS transistors M2 and M3. The noise cancellation stage is used for mutually canceling with noise voltage of the signal input s