Hybrid integrated optoelectronic chip of silicon dioxide base on silicon and preparation method thereof

Provided are a silica-on-silicon-based hybrid integrated optoelectronic chip and a manufacturing method therefor. The hybrid integrated optoelectronic chip comprises a silicon substrate (1), wherein the surface of the silicon substrate (1) is provided with a platform (8), lug bosses (6,7) and a groove (10); a silica waveguide element (2) is arranged in the groove (10), the lug bosses (6,7) are protruded from the surface of the platform (8), and the surface of the platform (8) is provided with a discontinuous metal electrode layer (3); and the surface of the metal electrode layer (3) is provided with solder bumps (4), and an active optoelectronic chip (5) is arranged above the solder bumps (4) and the lug bosses (6, 7). In the manufacturing method, multi-step processes including material growth, hot oxygen bonding, flip-chip bonding, lithography alignment and the like are adopted, thereby guaranteeing the high-efficiency light coupling among waveguide devices of different materials, and reducing the light reflection between waveguide end faces. A high-frequency electrode composed of alternating current electrode areas (26) is manufactured between the alignment lug bosses (6, 7). Due to the fact that flip-chip bonding technology is beneficial to the transmission of high-frequency signals, integration level between devices is improved. Meanwhile, the process design not only can achieve the chip-level probe test, but also can be used for the subsequent gold ball bonding or wedge bonding process, thereby facilitating the achievement of encapsulation and mass production of hybrid integrated chips.