Composite loading ligature method of insulated gate bipolar translator (IGBT) device

The invention discloses a composite loading ligature method of an insulated gate bipolar translator (IGBT) device. The composite loading ligature method of the IGBT device comprises an IGBT chip, a diode chip, a baseboard, routing areas and three pins, wherein the loading positions of the IGBT chip and the diode chip on the baseboard are ensured according to the sizes of the length and the width of the baseboard and the sizes of the length and the width of solder of the diode chip, an emitter E of the IGBT chip is in electric connection with a routing area of a third pin through a conductive wire, an anode A of the diode chip is in electric connection with the routing area of the third pin through a conductive wire, a grid electrode G of the IGBT chip is in electric connection with a routing area of a first pin through a conductive wire, so that connection of the IGBT chip and the diode chip in an anti-parallel mode is achieved. Due to the method, an IGBT discrete device with a reverse conducting diode and a high integration level is formed, inductance of leads inside the whole device is reduced, power density of the product is improved, and the composite loading ligature method of the IGBT device has the advantages of being exquisite and simple in structure, capable of saving space, high in reliability, and the like.