Transmission line structure capable of eliminating DDR3 (Double Data Rate 3) load difference influence as well as forming method and internal storage structure thereof

The invention provides a transmission line structure capable of eliminating DDR3 (Double Data Rate 3) load difference influence as well as a forming method and an internal storage structure thereof. The forming method comprises the following steps of: determining intrinsic parameters of a first-type transmission line and a second-type transmission line; determining first equivalent parameters of the first-type transmission line according to the intrinsic parameters of the first-type transmission line and the load capacity of a first load; determining second equivalent parameters of the second-type transmission line according to the intrinsic parameters of the second-type transmission line and the load capacity of a second load; determining the target delay of the first-type transmission line under the first load according to the first equivalent parameters; regulating the second equivalent parameters to third first equivalent parameters, so as to enable the equivalent delay of the second-type transmission lin