Polarization-reinforced p-i-n junction InGaN solar cell

The invention discloses a polarization-reinforced p-i-n junction InGaN solar cell. The polarization-reinforced p-i-n junction InGaN solar cell structurally comprises a substrate, a GaN layer, an all-strain relaxation high-In component InyGal-yN layer, an InGaN superlattice layer, a high-In component n-InyGal-yN layer, a high In component i-InxGal-xN layer, a high In component p-InyGal-yN layer and a p-GaN coverage layer from bottom to top. A negative electrode is led out from the high-In component n-InyGal-yN layer, and a positive electrode is led out from the p-GaN coverage layer. The structure of the p-i-n junction InGaN solar cell is directly formed on the all-strain relaxation InGaN layer and the InGaN superlattice layer which cannot generate mismatch strain on the p-i-n junction In GaN solar cell, and quality of p-i-n junction InGaN solar cell materials and cell conversion efficiency can be effectively improved. Further, an i-InGaN layer lower in In components is sandwiched between an n-InGaN layer higher in In components and the p-InGaN layer, tension strain is introduced into the i-InGaN layer by mismatch of lattices, and conversion efficiency of the p-i-n junction InGaN solar cell can be further improved.