Field effect transistor and manufacturing method thereof

The invention discloses a field effect transistor and a manufacturing method of the field effect transistor. The field effect transistor comprises a substrate, a source electrode and a drain electrode, a grid electrode and grid electrode oxide layers, wherein one of the source and drain electrodes is formed on a bump on the upper surface of the substrate while the other one is formed in the lower side substrate of the bump, and the upper surface is aligned with the upper surface of the substrate; the grid electrode is formed at an intersection of the bump and the upper surface of the substrate; and the grid electrode oxide layers are formed between the grid electrode and the bump as well as between the grid electrode and the upper surface of the substrate. The field effect transistor provided by the invention is in a vertical structure. The source electrode is located at the top of the bump, the drain electrode is located in the substrate, and the source and drain electrodes are not in a same plane. Therefore