Method for forming inclined sidewall by dry etching of GaN-based material

The invention provides a method for forming an inclined sidewall by dry etching of a GaN-based material, and belongs to the technical field of semiconductors. The method comprises the following steps of in sequence: cleaning an etched GaN-based sample; drying; removing the steam on the surface; manufacturing a shielding layer with thickness of 1 to 100 microns on the surface of the GaN-based sample by utilizing photoresist which can form a thick film, wherein the shielding layer has mobility and can gradually expand during dry etching in order to enable a shielding area to outwards expand; carrying out dry etching on the GaN-based sample to form the inclined sidewall; transferring the etched GaN-based sample into glue removing liquid to remove the residual shielding layer; sequentially ultrasonically cleaning by acetone and absolute ethyl alcohol; rinsing by deionized water; and drying by nitrogen in a blowing way. The method for forming the inclined sidewall by dry etching of the GaN-based material has the a