Method used for forming metallic conductor structure
The invention relates to a method for carrying out plated metal on a semiconductor material having a substare or a layer surface format, such as a solar cell, and especially relates to a conventional method for optimizing an emittor structure used for supplying a selectivity, so that the technical c...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | LUEHN OLE |
| description | The invention relates to a method for carrying out plated metal on a semiconductor material having a substare or a layer surface format, such as a solar cell, and especially relates to a conventional method for optimizing an emittor structure used for supplying a selectivity, so that the technical characteristic of the produced product can be improved. The method comprises the steps of providing discrete textured areas of the semiconductor material by selective removal of the protective layer, and carrying out galvanic deposition of a metallic seed layer and subsequently at least one further metal layer to form metallic conductor pattern on the surface of the substrate made of the semiconductor material, exhibiting a protective layer, so that the surface of the substrate is applied with a hydrophobic substance before or after the depositing the starting layer. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN102953099A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN102953099A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN102953099A3</originalsourceid><addsrcrecordid>eNrjZDDxTS3JyE9RKC1OTVFIyy8C4dzMvHSF3NSSxJyczGSF5Py8lNLkEqBUcUkRkFFalMrDwJqWmFOcyguluRkU3VxDnD10Uwvy41OLCxKTU_NSS-Kd_QwNjCxNjQ0sLR2NiVEDAFXCLT8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method used for forming metallic conductor structure</title><source>esp@cenet</source><creator>LUEHN OLE</creator><creatorcontrib>LUEHN OLE</creatorcontrib><description>The invention relates to a method for carrying out plated metal on a semiconductor material having a substare or a layer surface format, such as a solar cell, and especially relates to a conventional method for optimizing an emittor structure used for supplying a selectivity, so that the technical characteristic of the produced product can be improved. The method comprises the steps of providing discrete textured areas of the semiconductor material by selective removal of the protective layer, and carrying out galvanic deposition of a metallic seed layer and subsequently at least one further metal layer to form metallic conductor pattern on the surface of the substrate made of the semiconductor material, exhibiting a protective layer, so that the surface of the substrate is applied with a hydrophobic substance before or after the depositing the starting layer.</description><language>chi ; eng</language><subject>APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; SEMICONDUCTOR DEVICES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130306&DB=EPODOC&CC=CN&NR=102953099A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130306&DB=EPODOC&CC=CN&NR=102953099A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LUEHN OLE</creatorcontrib><title>Method used for forming metallic conductor structure</title><description>The invention relates to a method for carrying out plated metal on a semiconductor material having a substare or a layer surface format, such as a solar cell, and especially relates to a conventional method for optimizing an emittor structure used for supplying a selectivity, so that the technical characteristic of the produced product can be improved. The method comprises the steps of providing discrete textured areas of the semiconductor material by selective removal of the protective layer, and carrying out galvanic deposition of a metallic seed layer and subsequently at least one further metal layer to form metallic conductor pattern on the surface of the substrate made of the semiconductor material, exhibiting a protective layer, so that the surface of the substrate is applied with a hydrophobic substance before or after the depositing the starting layer.</description><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROFORMING</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>METALLURGY</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDxTS3JyE9RKC1OTVFIyy8C4dzMvHSF3NSSxJyczGSF5Py8lNLkEqBUcUkRkFFalMrDwJqWmFOcyguluRkU3VxDnD10Uwvy41OLCxKTU_NSS-Kd_QwNjCxNjQ0sLR2NiVEDAFXCLT8</recordid><startdate>20130306</startdate><enddate>20130306</enddate><creator>LUEHN OLE</creator><scope>EVB</scope></search><sort><creationdate>20130306</creationdate><title>Method used for forming metallic conductor structure</title><author>LUEHN OLE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN102953099A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2013</creationdate><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>METALLURGY</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LUEHN OLE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LUEHN OLE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method used for forming metallic conductor structure</title><date>2013-03-06</date><risdate>2013</risdate><abstract>The invention relates to a method for carrying out plated metal on a semiconductor material having a substare or a layer surface format, such as a solar cell, and especially relates to a conventional method for optimizing an emittor structure used for supplying a selectivity, so that the technical characteristic of the produced product can be improved. The method comprises the steps of providing discrete textured areas of the semiconductor material by selective removal of the protective layer, and carrying out galvanic deposition of a metallic seed layer and subsequently at least one further metal layer to form metallic conductor pattern on the surface of the substrate made of the semiconductor material, exhibiting a protective layer, so that the surface of the substrate is applied with a hydrophobic substance before or after the depositing the starting layer.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN102953099A |
| source | esp@cenet |
| subjects | APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES |
| title | Method used for forming metallic conductor structure |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T18%3A50%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LUEHN%20OLE&rft.date=2013-03-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN102953099A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |